CAS: 1307-99-9; Cobalt(Ii) Selenide

上下游产品

selenium cobalt cobalt(II) hydrogen selenide

专利信息

专利号:US-12226754-B2
优先权日:2020-12-30
标题:Method to produce high densities of isolated atoms on support substrates
发明人：SHAKOURI ABOLFAZL; ADABI FIROUZJAIE HORIE; REGALBUTO JOHN R; WILLIAMS CHRISTOPHER T; MUSTAIN WILLIAM E
权利人:UNIV SOUTH CAROLINA
摘要:Described herein is a general scalable synthesis method for a high density of single metal atoms in a supported catalyst, supported isolated atoms featuring unique reactivity and the support materials determine the stability, electronic properties, and local environment which can be adjusted for targeted heterogeneous catalysis applications.

专利号:US-10755939-B2
优先权日:2018-09-11
标 题 :Multilayer graphene using chemical vapor deposition and method of manufacturing same
发明人：CHO KILWON; YOO MIN SEOK; LEE HYO CHAN
权利人:CT ADVANCED SOFT ELECTRONICS; POSTECH ACADEMY-INDUSTRY FOUND
摘要:Disclosed is a method of manufacturing multilayer graphene, including (a) contacting of a metal substrate with a nonmetal element, (b) reduction through heat treatment, and (c) chemical vapor deposition of a graphene precursor on the metal substrate containing the nonmetal element dissolved therein, thereby manufacturing multilayer graphene that is doped with the nonmetal element on the metal substrate. In the multilayer graphene thus manufactured, the number of graphene layers and the work function are simultaneously adjusted by controlling the concentration of doped nonmetal element in a thickness direction of graphene through interactions related to the reduction of the nonmetal element dissolved in a copper catalyst and the growth of graphene, and moreover, the stacking structure of graphene is maintained and the optoelectronic properties of multilayer graphene can be controlled by simultaneously regulating graphene growth and doping during the synthesis procedure without additional processing.

专利号:CN-115275227-A
优先权日:2022-06-29
标题:Method for solid-phase macro synthesis of coral-shaped metal selenide composite nitrogen-doped carbon catalyst and application thereof

专利号:CN-1159211-C
优先权日:2002-06-07
标 题 :Synthesis of several metal selenides and tellurides as semiconductor material

专利号:CN-116790920-B
优先权日:2022-10-11
标 题 :A melt quenching method for general synthesis of nanoporous metal compound materials doped with metal single atoms

专利号:CN-116790920-A
优先权日:2022-10-11
标题:Universal synthesis of single-atom doped nano porous metal compound material by melt quenching method