CAS: 40665-68-7; Dimethyl (2-Oxo-3-Phenoxypropyl)Phosphonate

2-Hydroxy-3-Phenoxypropyldimethylphosphonate置于jones Reagent体系中,用 丙酮 作为反应溶剂,化学反应 7.0H,以92.8 G的收率获得产物(2-氧代-3-苯氧基丙基)膦酸二甲酯
参考文献:一种β-羰基磷酸酯的制备方法
标题:一种β-羰基磷酸酯的制备方法
摘要:本发明提供了一种β‑羰基磷酸酯的制备方法,以环氧化合物与亚磷酸三烷基酯进行区域选择性的开环反应反应生成β‑羟基磷酸酯中间体,随后氧化得到β‑羰基磷酸酯,该方法反应条件温和,操作简便,无需无水溶剂及氧气的保护,更加适合规模化生产.该制备方法所合成的β‑羰基磷酸酯,可以作为多种前列腺素药物合成的重要中间体,例如曲沃前列腺素,比马前列腺素及他氟前列腺素等.

专利信息

专利号:US-12252397-B2
优先权日:2019-05-02
标题:Process for the synthesis of nanoparticles of transition metal chalcogenides
发明人：MONIKA MONIKA; PODDAR PANKAJ
权利人:COUNCIL SCIENT IND RES
摘要:A process for the synthesis of transition metal chalcogenides (TMC) having formula (I). More particularly, the present work relates to a one pot single phase process for the synthesis of a TMC system having formula (I) by wet chemistry. Formula (I) is represented as Ax-By.

专利号:US-9305777-B2
优先权日:2011-03-31
标 题 :Catalyst free synthesis of vertically aligned CNTs on SiNW arrays
发明人：SHELKE MANJUSHA VILAS
权利人:SHELKE MANJUSHA VILAS; COUNCIL SCIENT IND RES
摘要:The present invention discloses novel one dimensional, direct nano-heterojunctions of vertically aligned silicon nanowires (SiNW)-carbon nano tube (CNT) arrays with ultra-low turn-on field useful in single electronic devices. The invention further discloses catalyst free chemical vapor deposition (CVD) route for synthesis of one dimensional, direct nano-heterojunctions of vertically aligned SiNW-CNT arrays.

专利号:US-2023109627-A1
优先权日:2019-11-14
标 题:Precursor chemistry for quantum dot synthesis enabling temperature-independent modulation of reactivity
发明人：HAN HEE-SUN; PARK JOONHYUCK
权利人:UNIV ILLINOIS
摘要:Provided herein are methods of making a high-quality quantum dot (QD), including by providing anion precursor chemistry that enables chemical modulation of precursor reactivity, thereby, allowing independent optimization of reaction temperature and precursor reactivity to systematically grow high quality QDs and by providing specially configured tunable precursors and related chemistry to facilitate separate reaction pathways for nucleation and growth, thereby accessing heat-up based synthesis of high-quality QD, including core-shell QDs. The methods may include providing a base-QD and a first anion or cation precursor having a composition comprising an anion or a cation element, respectively, and a modification agent. At least one add-layer is grown on the base-QD at a growth temperature, thereby making the high-quality QD comprising the base-QD and the at least one add-layer. At least one add-layer may have a composition comprising an add-layer cation element and an add-layer anion element.

专利号:US-12054391-B2
优先权日:2018-09-05
标题:Flash joule heating synthesis method and compositions thereof
发明人：TOUR JAMES MITCHELL; LUONG DUY X; KITTRELL WILBUR CARTER; CHEN WEIYIN
权利人:UNIV RICE WILLIAM M
摘要:Methods for the synthesis of graphene, and more particularly the method of synthesizing graphene by flash Joule heating (FJH). Such methods can be used to synthesize turbostratic graphene (including low-defect turbostratic graphene) in bulk quantities. Such methods can further be used to synthesize composite materials and 2D materials.

专利号:US-4033949-A
优先权日:1976-04-14
标 题:Analogs of thromboxane B2 and processes for their synthesis
发明人：KELLY ROBERT C; NELSON NORMAN A
权利人:UPJOHN CO
摘要:The present specification provides novel intermediates and novel processes for the synthesis of various side chain and skeletal analogs of Thromboxane B 2 (11β-homo-11a-oxa-PGF 2 .sub.α). These analogs are particularly and especially useful as reproductive cycle control agents.

专利号:US-11851320-B2
优先权日:2017-05-01
标 题 :Method of depositing nanotwinned nickel-molybdenum-tungsten alloys
发明人：SIM GI-DONG; KROGSTAD JESSICA; WEIHS TIMOTHY P; HEMKER KEVIN J; VALENTINO GIANNA
权利人:UNIV JOHNS HOPKINS
摘要:The present invention is directed to the synthesis of metallic nickel-molybdenum-tungsten films and coatings with direct current sputter deposition, which results in fully-dense crystallographically textured films that are filled with nano-scale faults and twins. The as-deposited films exhibit linear-elastic mechanical behavior and tensile strengths above 2.5 GPa, which is unprecedented for materials that are compatible with wafer-level device fabrication processes. The ultra-high strength is attributed to a combination of solid solution strengthening and the presence of the dense nano-scale faults and twins. These films also possess excellent thermal and mechanical stability, high density, low CTE, and electrical properties that are attractive for next generation metal MEMS applications. Deposited as coatings these films provide protection against friction and wear. The as-deposited films can also be heat treated to modify the internal microstructure and attendant mechanical properties in a way that provides a desired balance of strength and toughness.