CAS: 216581-76-9; 3-Hydroxyadamantan-1-Yl Acrylate

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115372-36-6 115522-15-1 121601-93-2

上下游产品

3-羟基-1-金刚烷基甲基丙烯酸酯 3-Hydroxy-1-Adamantyl Methacrylate 115372-36-6
1-乙基环戊基甲基丙烯酸酯 1-Ethylcyclopentyl Methacrylate 266308-58-1

1,3-金刚烷二醇,丙烯酰氯置于三乙胺体系中,用 二氯甲烷 用作溶剂,化学反应 3.0H,以90.9%的收率获得1,3-金刚烷二醇单丙烯酸酯
参考文献:一种含米氏酸结构的光刻胶树脂单体及其合成方法
标题:一种含米氏酸结构的光刻胶树脂单体及其合成方法
摘要:本发明公开了一种含米氏酸结构的光刻胶树脂单体,涉及光刻胶树脂单体领域,其结构式如下所示:其中r1为甲基或者h,R2为烷基,环烷基或含o原子的烷基,含o原子的环烷基,R3为h或者烷基,所述树脂单体有利于增加光刻胶树脂的碱溶性,能够改善光刻图案的边缘侧糙度,具有更好的耐刻蚀性,大大提高了光刻图形的分辨率,还可以改善光刻胶在硅晶圆上的吸附力.

专利信息

专利号:US-7250475-B2
优先权日:2003-06-26
标 题:Synthesis of photoresist polymers

专利号:US-8043786-B2
优先权日:2003-03-05
标题 :Acid generators, sulfonic acids, sulfonyl halides, and radiation sensitive resin compositions
发明人：EBATA SATOSHI; WANG YONG; NISHIMURA ISAO
权利人:JSR CORP
摘要:The invention provides novel acid generators which are unproblematic in combustibility and accumulation inside the human body and can generate acids having high acidities and high boiling points and exhibiting properly short diffusion lengths in resist coating films and which permit the formation of resist patterns excellent smoothness with little dependence on the denseness of a mask pattern; sulfonic acids generated from the acid generators; sulfonyl halides useful as raw material in the synthesis of the acid generators; and radiation-sensitive resin compositions containing the acid generators. The acid generators have structures represented by the general formula (I), n nwherein R 1 is a monovalent substituent such as alkoxycarbonyl, alkylsulfonyl, or alkoxysulfonyl; R 2 to R 4 are each hydrogen or alkyl; k is an integer of 0 or above; and n is an integer of 0 to 5. Among the radiation-sensitive resin compositions, a positive one contains a resin having acid-dissociable groups in addition to the above acid generator, while a negative one contains an alkali-soluble resin and a crosslinking agent in addition to the acid generator.

专利号:KR-20090102733-A
优先权日:2006-12-27
标 题 :Method for synthesis of hyperbranched polymer, hyperbranched polymer, resist composition, semiconductor integrated circuit, and method for production of semiconductor integrated circuit

专利号:KR-20090103860-A
优先权日:2006-12-28
标题:Process for synthesis of hyperbranched polymer, hyperbranched polymer, resist compositions, semiconductor integrated circuits, and process for production of semiconductor integrated circuits