CAS: 1608-26-0; Hexamethylphosphorous Triamide

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CAS号3348-44-5 双(二甲基氨)氯膦 | CAS号124-40-3 二甲胺 | CAS号2083-91-2 N-(三甲基硅烷基)二甲胺 | CAS号20727-59-7 tetrakis(dimeth... | CAS号5574-93-6 chlorotris(dime... | CAS号53617-91-7 1-(benzyloxy)-N... | CAS号683-85-2 二氯(二甲氨基)膦 | CAS号35520-41-3 反式-3-(二甲氨基)丙烯腈 | CAS号84673-27-8 (E)-3-(N,N-dime... | CAS号598-94-7 N,N-二甲基脲 | CAS号5577-13-9 N-(4-甲基苯基)磺酰氨基甲酸乙酯 | CAS号3348-44-5 双(二甲基氨)氯膦 | CAS号683-85-2 二氯(二甲氨基)膦 | CAS号5830-30-8 N,N-二甲基己酰胺 | CAS号1459-20-7 DESYL BENZOATE | CAS号15205-57-9 三苄基 亚磷酸酯 | CAS号14274-42-1 N,N,4,4,5,5-hex...

N,N-二甲基三甲基硅胺置于三氯化磷体系中,用 乙腈 用作溶剂,化学反应生成三(二甲胺基)膦
参考文献:膦酰乙酸酯和硫代膦酰乙酸酯寡脱氧核苷酸的固相化学合成
标题:膦酰乙酸酯和硫代膦酰乙酸酯寡脱氧核苷酸的固相化学合成
摘要:Phosphonoacetate 和 Thiophosphonoacetate 寡脱氧核苷酸是通过固相合成策略制备的.在 Reformatsky 反应条件下,合成了新型酯化乙酸膦酰二亚胺,并与适当保护的 5'-O-(4,4'-二甲氧基三苯甲基)-2'-脱氧核苷缩合,反应生成3'-O-膦亚酰胺反应单体.这些合成子在用四唑激活时与自动 Dna 合成仪一起使用,以在受控孔玻璃上制备膦酰乙酸修饰的核苷酸间连接.在每一步用 (1S)-(+)-(10-樟脑磺酰基)恶氮丙啶或 3H-1,2-苯二硫醇-3-One-1 定量氧化膦基乙酸酯偶联产物,1-二氧化物产生混合序列膦酰乙酸酯和硫代膦酰乙酸酯寡脱氧核苷酸,平均每循环偶联效率大于 97%.完全脱保护,修饰的寡脱氧核苷酸通过反相 HPLC 纯化,并通过离子交换 HPLC,(31) P NMR 和 Maldi/tof 质谱进行表征.两种类似物都对蛇毒磷酸二酯酶的水解稳定并刺激
Doi:10.1021/ja027983F

专利信息

专利号:US-7241399-B2
优先权日:2000-09-08
标题 :Synthesis of nanoparticles
发明人：HAUBOLD STEPHAN; HAASE MARKUS; RIWOTZKI KARSTEN; WELLER HORST; MEYSSAMY HEIKE; IBARRA FERNANDO
权利人:CT ANGEWANDTE NANOTECH CAN
摘要:Methods for the preparation of inorganic nanoparticles capable of fluorescence, wherein the nanoparticles consist of a host material that comprises at least one dopant. The synthesis of the invention in organic solvents allows to gain a considerably higher yield compared to the prior art synthesis in water. All kinds of objects can advantageously be marked and reliably authenticated by using an automated method on the basis of a characteristic emission. Further, the size distribution of the prepared nanoparticles is nartower which renders a subsequent size-selected separation process superfluous.

专利号:US-2023286918-A1
优先权日:2020-07-02
标 题:Manufacturing process for 3,5-dichloropicolinonitrile for synthesis of vadadustat
发明人：JURKAUSKAS VALDAS; JUNG YOUNG CHUN; KWON TAESOO; KANNAN ARUNACHALAM; GONDI VIJAYA BHASKER
权利人:AKEBIA THERAPEUTICS INC
摘要:Disclosed herein are methods and processes of preparing vadadustat or a pharmaceutically acceptable salts thereof, and intermediates (e.g., a compound of Formula (I), (I-F), (II), or (IV), or a pharmaceutically acceptable salts thereof) useful for the synthesis of vadadustat.

专利号:US-9969823-B1
优先权日:2011-09-01
标题 :Synthesis and polymerization of vinyl triazolium ionic liquids
发明人：LUEBKE DAVID; NULWALA HUNAID; MATYJASZEWSKI KRZYSZTOF; ADZIMA BRIAN
权利人:US ENERGY; THE US DEPARTMENT OF ENERGY
摘要:Herein, we describe polymerized ionic liquids, demonstrate the synthesis of polymerized ionic liquids, and demonstrate the polymerization of triazolium monomers. One embodiment shows the polymeriazation of the triazolium monomers with bis(trifluoromethanesulfonyl)imide anions. In another embodiment we show the feasibility of copolymerizing with commodity monomers such as styrene using free radical polymerization techniques.

专利号:US-7358372-B2
优先权日:2003-07-31
标 题 :Method for the synthesis of perindopril and the pharmaceutically acceptable salts thereof
发明人：FUGIER CLAUDE; DUBUFFET THIERRY; LANGLOIS PASCAL
权利人:SERVIER LAB
摘要:Process for the synthesis of perindopril of formula (I): n nand its pharmaceutically acceptable salts.

专利号:US-7368580-B2
优先权日:2003-07-31
标 题:Method for the synthesis of perindopril and the pharmaceutically acceptable salts thereof
发明人：FUGIER CLAUDE; DUBUFFET THIERRY; LANGLOIS PASCAL
权利人:SERVIER LAB
摘要:Process for the synthesis of perindopril of formula (I): n nand its pharmaceutically acceptable salts.

专利号:US-2025197431-A1
优先权日:2023-12-15
标 题:Methods and systems for forming a layer comprising silicon and composition and synthesis of silicon precursor
发明人：ROMERO PATRICIO EDUARDO; VERVUURT RENÉ HENRICUS JOZEF; DEZELAH CHARLES; PORE VILJAMI J
权利人:ASM IP HOLDING BV
摘要:Disclosed are methods and systems for forming a silicon-containing layer on a substrate. Further disclosed are composition and synthesis of silicon-containing precursor. The methods for forming a silicon-containing layer comprise executing a plurality of deposition cycles. A deposition cycle comprises a first precursor pulse that comprises exposing the substrate to a first precursor. The first precursor comprises a molecule comprising a P—Si bond. A deposition cycle further comprises a plasma pulse that comprises exposing the substrate to a plasma treatment. The plasma treatment comprises generating a plasma.