CAS: 1558-25-4; Trichloro(Chloromethyl)Silane

相似化合物

1558-33-4 17760-13-3 7787-82-8

上下游产品

CAS号75-79-6 甲基三氯硅烷 | CAS号186581-53-3 重氮甲烷 | CAS号1558-24-3 三氯(二氯甲基)硅烷 | CAS号776-76-1 甲基二苯基硅烷 | CAS号17760-13-3 三氯甲基三氯硅烷 | CAS号10026-04-7 四氯化硅 | CAS号75-09-2 二氯甲烷 | CAS号42003-39-4 氯甲基杂氮硅三烷 | CAS号75-77-4 三甲基氯硅烷 | CAS号4206-67-1 碘甲基三甲基硅烷 | CAS号2344-80-1 氯甲基三甲基硅烷 | CAS号4142-85-2 双(三氯硅基甲烷) | CAS号75-79-6 甲基三氯硅烷 | CAS号16538-67-3 1,1,1,3,3,5,5,5... | CAS号1956-79-2 chloromethyl(tr... | CAS号18076-97-6 bis-(Chlorometh... | CAS号1719-52-4 chlorotris(chlo...

重氮甲烷置于四氯化硅,乙醚,铜体系中,化学反应生成(氯甲基)三氯硅烷
参考文献:The Preparation Of Chloromethyl Derivatives Of Germanium And Silicon By The Diazomethane Method
标题:The Preparation Of Chloromethyl Derivatives Of Germanium And Silicon By The Diazomethane Method
摘要:
Doi:10.1021/ja01609A031

专利信息

专利号:US-9416147-B2
优先权日:2014-04-03
标题 :Preparation of silazane compound
发明人：TONOMURA YOICHI; KUBOTA TOHRU
权利人:SHINETSU CHEMICAL CO
摘要:A silazane compound useful as synthesis intermediates for paint additives, polymer modifiers, pharmaceuticals and agricultural chemicals is efficiently prepared by reaction of a halosilane compound with an amino-containing compound in a solvent which is the same silazane compound as the target product.

专利号:DE-4024600-A1
优先权日:1989-08-03
标题 :ELECTROCHEMICAL SYNTHESIS OF ORGANOSILICIUM COMPOUNDS

专利号:HU-210806-B
优先权日:1989-12-01
标 题 :Procedure and connection-arrangement for low temperature synthesis of atran-skeletoned compounds by half-continuous technology

专利号:GB-2234511-A
优先权日:1989-08-03
标 题:Electrochemical synthesis of organosilicon compounds

专利号:CA-2022184-A1
优先权日:1989-08-03
标题:Electrochemical synthesis of organosilicon compounds

专利号:US-10870917-B2
优先权日:2016-07-08
标 题:Functionalized foams
发明人：DARLING SETH B; ELAM JEFFREY W; MANE ANIL U; SNYDER SETH W
权利人:UCHICAGO ARGONNE LLC
摘要:A method of fabricating an foam includes providing a foam comprising a base material. The base material is coated with an inorganic material using at least one of an atomic layer deposition (ALD), a molecular layer deposition (MLD), or sequential infiltration synthesis (SIS) process. The SIS process includes at least one cycle of exposing the foam to a first metal precursor for a first predetermined time and a first partial pressure. The first metal precursor infiltrates at least a portion of the base material and binds with the base material. The foam is exposed to a second co-reactant precursor for a second predetermined time and a second partial pressure. The second co-reactant precursor reacts with the first metal precursor, thereby forming the inorganic material on the base material. The inorganic material infiltrating at least the portion of the base material. The inorganic material is functionalized with a material.