CAS: 25114-58-3; Indium(Iii)Acetate

专利信息

专利号:US-2022297078-A1
优先权日:2019-08-08
标题 :Sonochemical synthesis of particles
发明人：POZZO LILO D; KASTILANI RYAN; BISHOP BRITTANY P; LI DAVID SHICHENG
权利人:UNIV WASHINGTON
摘要:Sonochemical synthesis methods of particles (e.g., nanoparticles, microparticles, quantum dots) in emulsion reaction mixtures are described herein. The methods allow for control of the bulk temperature of the reaction mixtures to minimize the effects of solvent temperature increases. The sonochemical synthesis methods (e.g., in emulsion reaction mixtures) offer efficient, accelerated, and controllable pathways towards the on-demand synthesis of complex materials.

专利号:US-7615169-B2
优先权日:2004-09-20
标题 :Method for synthesis of colloidal nanoparticles
发明人：STROUSE GEOFFREY FIELDING; GERBEC JEFFREY A; MAGANA DONNY
权利人:UNIV CALIFORNIA
摘要:A method for synthesis of high quality colloidal nanoparticles using comprises a high heating rate process. Irradiation of single mode, high power, microwave is a particularly well suited technique to realize high quality semiconductor nanoparticles. The use of microwave radiation effectively automates the synthesis, and more importantly, permits the use of a continuous flow microwave reactor for commercial preparation of the high quality colloidal nanoparticles.

专利号:US-7927516-B2
优先权日:2004-09-20
标题 :Method for synthesis of colloidal nanoparticles
发明人：STROUSE GEOFFREY F; GERBEC JEFFREY A; MAGANA DONNY
权利人:UNIV CALIFORNIA
摘要:A method for synthesis of high quality colloidal nanoparticles using comprises a high heating rate process. Irradiation of single mode, high power, microwave is a particularly well suited technique to realize high quality semiconductor nanoparticles. The use of microwave radiation effectively automates the synthesis, and more importantly, permits the use of a continuous flow microwave reactor for commercial preparation of the high quality colloidal nanoparticles.

专利号:WO-2013057134-A1
优先权日:2011-10-19
标 题:Synthesis of semiconductor nanoparticles using metal precursors comprising non- or weakly coordinating anions
发明人：BAHNMUELLER STEFAN; TIAN SUSAN; TIAN SHIZHE; HOHEISEL WERNER
权利人:BAYER IP GMBH; BAYER SOUTH EAST ASIA PTE LTD
摘要:The present invention relates to a method for the synthesis of semiconductor nanoparticles comprising elements of the groups IB, IIB, IIIA, IVA, VA or VIA of the periodic classification wherein the composition of the core nanoparticle is selected from the group consisting of IB-VIA, IIB-VIA, IIIA-VIA, IB-IIIA-VIA or IB-IIB-TVA-VIA, IIB-IIIA-VIA, IIB-TVA-VA or mixtures thereof, and at least one shell comprises elements of the groups IIB and VIA,, wherein in case the core composition is IIB-VIA the shell comprises at least a further element selected from the groups IB, IIIA, IVA or VA, using metal precursors comprising non- or weakly coordinating anions. It further relates to the consecutive process for the synthesis that includes first the preparation of a binary nanoparticle system then modified to make a ternary system which again can be further modified to make a quaternary system.

专利号:US-9790425-B2
优先权日:2014-04-18
标 题:Synthesis of quantum dots
发明人：MCDANIEL HUNTER
权利人:LOS ALAMOS NAT SECURITY LLC
摘要:Common approaches to synthesizing alloyed quantum dots employ high-cost, air-sensitive phosphine complexes as the selenium precursor. Disclosed quantum dot synthesis embodiments avoid these hazardous and air-sensitive selenium precursors. Certain embodiments utilize a combination comprising a thiol and an amine that together reduce and complex the elemental selenium to form a highly reactive selenium precursor at room temperature. The same combination of thiol and amine acts as the reaction solvent, stabilizing ligand, and sulfur source in the synthesis of quantum dot cores. A non-injection approach may also be used. The optical properties of the quantum dots synthesized by this new approach can be finely tuned for a variety of applications by controlling size and/or composition of size and composition. Further, using the same approach, a shell can be grown around a quantum dot core that improves stability, luminescence efficiency, and may reduce toxicity.

专利号:US-2023109627-A1
优先权日:2019-11-14
标 题:Precursor chemistry for quantum dot synthesis enabling temperature-independent modulation of reactivity
发明人：HAN HEE-SUN; PARK JOONHYUCK
权利人:UNIV ILLINOIS
摘要:Provided herein are methods of making a high-quality quantum dot (QD), including by providing anion precursor chemistry that enables chemical modulation of precursor reactivity, thereby, allowing independent optimization of reaction temperature and precursor reactivity to systematically grow high quality QDs and by providing specially configured tunable precursors and related chemistry to facilitate separate reaction pathways for nucleation and growth, thereby accessing heat-up based synthesis of high-quality QD, including core-shell QDs. The methods may include providing a base-QD and a first anion or cation precursor having a composition comprising an anion or a cation element, respectively, and a modification agent. At least one add-layer is grown on the base-QD at a growth temperature, thereby making the high-quality QD comprising the base-QD and the at least one add-layer. At least one add-layer may have a composition comprising an add-layer cation element and an add-layer anion element.