CAS: 6487-48-5; Potassium Oxalate Monohydrate

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专利信息

专利号:US-2017246619-A1
优先权日:2014-09-26
标 题 :Solid state synthesis of oxidative dehydrogenation catalysts
发明人：BASSET JEAN-MARIE; ZHU HAIBO; ROSENFELD DEVON C; LAVEILLE PACO
权利人:DOW GLOBAL TECHNOLOGIES LLC
摘要:Synthesize a nickel oxide-based oxidative dehydrogenation catalyst via a solvent-free process that comprises sequential steps a. mixing without added solvent a combination of a solid nickel precursor, a solid oxalate or oxalic acid and, optionally, a doping amount of a metal precursor for a period of time sufficient to convert the combination to a visually homogenous mixture; and b. calcining the visually homogeneous mixture at a temperature within a range of from greater than 250° C. to less than 800° C. for a time within a range of from 30 minutes to 360 minutes in an oxygen-containing atmosphere, preferably air, to form a calcined oxidative dehydrogenation catalyst. As a modification of the process, add an intermediate step between steps a. and b. to dry the homo geneous mixture at a temperature within a range of from 50° C. to 90° C. for a period of time within a range of from 10 minutes to 600 minutes to form a dried mixture. The resulting catalyst may be used in oxidative dehydrogenation of ethane.

专利号:CN-106714965-A
优先权日:2014-09-26
标 题 :Solid state synthesis of oxidative dehydrogenation catalysts

专利号:EP-3197599-A1
优先权日:2014-09-26
标 题:Solid state synthesis of oxidative dehydrogenation catalysts

专利号:WO-2016048806-A1
优先权日:2014-09-26
标 题:Solid state synthesis of oxidative dehydrogenation catalysts

专利号:CA-2962749-A1
优先权日:2014-09-26
标 题:Solid state synthesis of oxidative dehydrogenation catalysts

专利号:US-2025179684-A1
优先权日:2023-11-30
标题 :Thermal stable, one-dimensional hexagonal-phase vanadium sulfide nanowires and methods for preparing the same
发明人：ZHANG HUA; REN YI
权利人:UNIV CITY HONG KONG
摘要:The present invention provides a general salt-assisted chemical vapor deposition (SA-CVD) synthetic method for the high-yield preparation of 1D hexagonal-phase MxV6S8(M=K, Rb, Cs) and KxV6SySe8-y nanowires. The resulting nanowires exhibit typical metallic properties, which can be used as a good van der Waals contact for achieving high-performance fermi level pinning free transistors. The present synthesis method allows a more systematic investigation of the intrinsic properties of hexagonal-phase V6S8 structures.