CAS: 12063-98-8; Gallanylidynephosphane

上下游产品

phosphan gallium phosphorus trichloride tris(di-tert-butyphosphino)gallanephosporus oxide phosphorus dioxide 4O2P4O2 gallium(I) ion

专利信息

专利号:US-4093704-A
优先权日:1974-01-16
标 题 :Method for synthesis of III-V compounds
发明人：JACOB GUY MICHEL
权利人:PHILIPS CORP
摘要:The invention relates to a method for the synthesis of a semiconductor compound comprising at least one element of column III of the periodic table of Mendeleev, and an element of column V having a vapor pressure higher than that of element(s) III at the synthesis temperature of the said compound, and according to which, in a closed space, a liquid mass of element(s) III, placed in a first zone of said space which is heated at relatively high temperatures and is contacted with vapors obtained by evaporation of element V, said element V being placed in a second zone of the said space in a non-gaseous form, the evaporation temperature of element V being higher than that of the coldest point provided in a third zone of the said space, and the said first zone being situated between the second and the third zone.

专利号:US-6603070-B2
优先权日:2000-07-21
标题 :Convergent synthesis of multiporphyrin light-harvesting rods
发明人：LINDSEY JONATHAN S; LOEWE ROBERT S
权利人:UNIV NORTH CAROLINA STATE
摘要:The present invention provides a convergent method for the synthesis of light harvesting rods. The rods are oligomers of the formula A 1 (A b+1 ) b , wherein b is at least 1, A 1 through A b+1 are covalently coupled rod segments, and each rod segment A 1 through A 1+b comprises a compound of the formula X 1 (X m+1 ) m wherein m is at least 1 and X 1 through X m+1 are covalently coupled porphyrinic macrocycles. Light harvesting arrays and solar cells containing such light harvesting rods are also described, along with intermediates useful in such methods and rods produced by such methods.

专利号:US-11745159-B2
优先权日:2017-10-20
标题:Heated nanowells for polynucleotide synthesis
发明人：MARSH EUGENE P; INDERMUHLE PIERRE F; PECK BILL JAMES
权利人:TWIST BIOSCIENCE CORP
摘要:Defined sequence RNA synthesis by 3′→5′ direction is now well established and currently in use for synthesis and development of vast variety of therapeutic grade RNA and Si RNA etc. A number of such synthetic RNA requires a modification or labeling of 3′-end of an oligonucleotide. The synthesis of 3′-end modified RNA requiring lipophilic, long chain ligands or chromophores, using 3′→5′ synthesis methodology is challenging, requires corresponding solid support and generally results in low coupling efficiency and lower purity of the final oligonucleotide in general because of large amount of truncated sequences containing desired hydrophobic modification. We have approached this problem by developing reverse RNA monomer phosphoramidites for RNA synthesis in 5′→3′-direction. They lead to very clean oligonucleotide synthesis allowing for introduction of various modifications at the 3′-end.

专利号:US-12383879-B2
优先权日:2020-12-23
标题 :Semiconductor phosphide injection synthesis system and control method
发明人：SUN NIEFENG; WANG SHUJIE; LIU HUISHENG; SUN TONGNIAN
权利人:THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECH GROUP CORPORATION
摘要:A semiconductor phosphide injection synthesis system and a control method are provided, which belong to the technical field of preparation of semiconductor phosphides. The semiconductor phosphide injection synthesis system includes a furnace body, a shielding carrier box arranged above the furnace body by virtue of a lifting mechanism, a phosphorus source carrier arranged in the shielding carrier box, an injection pipe arranged below the phosphorus source carrier, and a crucible arranged at an inner bottom of the furnace body in a matched manner. The phosphorus source carrier includes a phosphorus source carrier main body, a phosphorus source carrier upper cover, a heating element base arranged at an inner bottom of the phosphorus source carrier main body, and a heating element arranged on the heating element base; a heat insulation layer is wrapped on an outer wall of the phosphorus source carrier; and an induction coil is arranged between the heat insulation layer and an inner wall of the shielding carrier box. By improving a device and method, the system stability can be improved, and an entire synthesis system achieves quantitative synthesis, which lowers the risk of explosion of the phosphorus source carrier.

专利号:US-12188145-B2
优先权日:2018-12-14
标 题:Device and method for continuous VGF crystal growth through reverse injection synthesis
发明人：WANG SHUJIE; SUN NIEFENG; SUN TONGNIAN; LIU HUISHENG; SHI YANLEI; SHAO HUIMIN; FU LIJIE; JIANG JIAN; ZHANG XIAODAN; LI XIAOLAN; WANG YANG
权利人:THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECH GROUP CORPORATION
摘要:The invention discloses a device and a method for continuous VGF crystal growth through reverse injection synthesis, relating to a device for preparing a semiconductor crystal and growing a single crystal, in particular to a method and a device for continuously growing the crystal in situ by using a VGF method and reverse injection synthesis. The device includes a furnace body, a crucible, a heat preservation system, a heating system, a temperature control system and a gas pressure regulation system, wherein the crucible is arranged in the furnace body, has a synthesis unit at its upper part, and has a crystal growth unit and a seed crystal unit at its lower part, and the synthesis unit is communicated with the crystal growth unit through capillary pores.

专利号:US-10648100-B1
优先权日:2017-12-08
标题 :Method for carrying out phosphide in-situ injection synthesis by carrier gas
发明人：SUN NIEFENG; WANG SHUJIE; LIU HUISHENG; SUN TONGNIAN
权利人:THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECH GROUP CORPORATION
摘要:The present invention discloses a method for carrying out phosphide in-situ injection synthesis by carrier gas, relating to a synthetic method of semiconductor crystal: step A, shielding inert gas is introduced into a furnace body through a carrier gas intake conduit; step B, a crucible is heated in the furnace body to melt a pre-synthesized raw material in the crucible; step C, the heated shielding inert gas is introduced into the furnace body through the carrier gas intake conduit; step D, a phosphorus source furnace loaded with red phosphorus is moved downwards until an injection conduit of the phosphorus source furnace is submerged in the melt; step E, the red phosphorus is heated by the phosphorus source furnace to produce phosphorus gas, and the phosphorus gas is mixed with the shielding inert gas and then injected into the melt through the injection conduit, and the phosphorus gas reacts with the melt to produce phosphide; and step F, each device is turned off after the synthesis is finished. In the present invention in the synthesis process, the shielding inert gas is introduced through the carrier gas intake conduit to enable the phosphorus gas to be stably injected into the melt, so that the melt is prevented from being sucked back into the phosphorus source furnace after the volatile element gas is completely absorbed.