CAS: 22398-80-7; Indium(Iii) Phosphide

该化合物是三-五复合半导体,直带带带宽1.35 eV,使其在光电子和高频应用方面高度高效,其高级电子流动性(高达5400厘米2/V)和热稳定性使其在高速晶体管,光检测器和激光二极管,特别是在电信和光纤系统中的理想状态.由于太阳电池的辐射抗药性和转化效率高,在光纤电池中也更倾向于使用内聚二极管.该物质与上层增长技术的兼容性使得能够精确地制造外层结构,支持先进的装置性能.在高能和高温条件下,其稳定性进一步突出了其在高要求的工业和研究环境中的效用.

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Tris(trimethylsilyl)phosphane indium chloride phosphan indium

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    专利信息


    专利号:US-4783320-A
    优先权日:1985-11-25
    标 题 :Rapid synthesis of indium phosphide
    发明人:ADAMSKI JOSEPH A; AHERN BRIAN S
    权利人:US AIR FORCE
    摘要:A process for the high pressure synthesis of InP using an independent temperature control of a three zone furnace incorporating a heat pipe provides a stable temperature profile throughout the synthesis cycle. Internal/external pressure control of the quartz ampoule is maintained by use of a water cooled baffle and a temperature/pressure balancing program. Complete synthesis is achieved in less than five hours.

    专利号:US-2023021452-A1
    优先权日:2020-03-18
    标 题:Modular flow reactors for accelerated synthesis of indium phosphide quantum dots
    发明人:ABOLHASANI MILAD; RAMEZANI MAHDI
    权利人:UNIV NORTH CAROLINA STATE
    摘要:System for synthesis of colloidal nanomaterial includes a multi-stage modular flow reactor that includes four distinct reactor modules for in-flow synthesis of colloidal nanomaterial. The system further includes a computer module for monitor and control of operations of the four reactor modules.

    专利号:WO-9819964-A1
    优先权日:1996-11-04
    标题:Method for the synthesis of group iii nitride crystals
    发明人:ANGUS JOHN C; ARGOITIA ALBERTO; HAYMAN CLIFF C
    权利人:UNIV CASE WESTERN RESERVE; ANGUS JOHN C; ARGOITIA ALBERTO; HAYMAN CLIFF C
    摘要:A novel method for the synthesis of Group III nitride crystals is disclosed. The method contemplates the reaction of a liquid form of the Group III nitride metal with active nitrogen. The active nitrogen may be generated by a plasma or the thermal decomposition of ammonia and may be neutral, ionic, excited or a mixture thereof. Using the method of the present invention, the crystalline Group III nitride can be grown at pressures of one atmosphere and below. Polycrystalline films grown by this method are of sufficient quality to show luminescence at room temperature.

    专利号:US-11548793-B2
    优先权日:2016-10-19
    标题:Synthesis of aerosol gels comprising macro-aggregates in a buoyancy-opposed flame reactor by a diffusion-limiting cluster aggregating process
    发明人:CHAKRABARTY RAJAN K; LIU PAI
    权利人:WASHINGTON UNIVERSITY ST LOUIS
    摘要:A process for gas-phase synthesis of titanium dioxide aerosol gels with controlled monomer size and crystalline phase using a diffusion flame aerosol reactor operated in a buoyancy-opposed configuration is disclosed. The process includes introducing a precursor stream into a diffusion flame aerosol reactor, introducing a fuel stream into the reactor, combusting the precursor stream and the fuel stream in a flame to form at least one nanoparticle, and operating the reactor in a down-fired buoyancy-opposed configuration to produce the aerosol gel.

    专利号:US-4185081-A
    优先权日:1978-07-31
    标 题 :Procedure for the synthesis of stoichiometric proportioned indium phosphide
    发明人:ADAMSKI JOSEPH A; FAUTH THOMAS A
    权利人:US AIR FORCE
    摘要:A method for synthesizing indium phosphide that avoids the explosion problem which often occurs in the synthesis procedures which use the direct reaction of elemental phosphorus and elemental indium to produce indium phosphide. The method utilizes specific heating, pressurizing and cooling parameters to safely produce highly pure, stoichiometric, polycrystalline indium phosphide.

    专利号:US-9577149-B2
    优先权日:2011-12-01
    标 题:Continuous synthesis of high quantum yield InP/ZnS nanocrystals
    发明人:LU HUACHANG; HOHEISEL WERNER; MLECZKO LESLAW; NOWAK STEPHAN
    权利人:QUANTUM MAT CORP
    摘要:The invention relates to a continuous-flow synthesis process for the preparation of high quality indium phosphide/zinc sulfide core/shell semiconduting nanocrystals in particular quantum dots (QD) conducted in a micro-reaction system comprising at least one mixing chamber connected to one reaction chamber.
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    主要参考文献

    [参考文献]: Alberto L D Moreau, Et Al. Highly-Sensitive And Label-Free Indium Phosphide Biosensor For Early Phytopathogen Diagnosis. Biosens Bioelectron. 2012 Jun-Jul;36(1):62-8.
    [参考文献]: Hwa Sub Oh, Et Al. Structural And Optical Investigation Of Gainp Quantum Dots According To The Growth Thickness For The 700 Nm Light Emitters. J Nanosci Nanotechnol. 2013 Jan;13(1):564-7.
    [参考文献]: J S Fandio, Et Al. Integrated Inp Frequency Discriminator For Phase-Modulated Microwave Photonic Links. Opt Express. 2013 Feb 11;21(3):3726-36.
    [参考文献]: John S Parker, Et Al. Regrowth-Free High-Gain Ingaasp/inp Active-Passive Platform Via Ion Implantation. Opt Express. 2012 Aug 27;20(18):19946-55.
    [参考文献]: Jongho Lee, Et Al. Stretchable Semiconductor Technologies With High Areal Coverages And Strain-Limiting Behavior: Demonstration In High-Efficiency Dual-Junction Gainp/gaas Photovoltaics. Small. 2012 Jun 25;8(12):1851-6.

    合成参考文献


    参考文献:10.1364/oe.19.013540
    摘要:Muñoz P, García-Olcina R, Habib C, Chen LR, Leijtens XJ, de Vries T, Robbins D, Capmany J. Label swapper device for spectral amplitude coded optical packet networks monolithically integrated on InP. Opt Express. 2011 Jul 04;19(14):13540–50. doi: 10.1364/oe.19.013540.
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