CAS: 878376-35-3; Pyridine-2-Sulfonyl Fluoride

相似化合物

1780694-70-3 1934413-84-9 1210867-93-8

上下游产品

2-Sulfanylpyridine pyridine-2-sulfonyl chloride4-(2-pyridinyl)anisole

吡啶-2-磺酰氯置于calcium Fluoride,Dipotassium Hydrogenphosphate,水体系中,用 邻二氯苯 作为反应溶剂,以54 %的收率获得产物吡啶-2-磺酰氟
参考文献:通过绕过 Hf 的磷酸盐机械化学工艺从萤石中提取氟化物
标题:通过绕过 Hf 的磷酸盐机械化学工艺从萤石中提取氟化物
摘要:所有含氟化合物(包括元素氟以及亲核,亲电和自由基氟化试剂)均由氟化氢 (Hf) 制备.这种剧毒和腐蚀性气体是由酸级萤石(>97% Caf2)在恶劣条件下与硫酸反应.使用萤石通过绕过 Hf 的工艺来生产含氟化合物是非常理想的,但由于 Caf 的不溶性,仍然是一个未解决的问题2.受磷酸钙生物矿化的启发,我们在此公开了一种用磷酸氢二钾(k2羟基磷灰石4)在机械化学条件下.该过程提供了由结晶 K 组成的固体3(Hpo4)F 和 K2− X 钙 Y (采购订单3F) A (采购订单4) 乙,被发现适合形成硫-氟和碳-氟键.
DOI:10.1126/science.Adi1557

专利信息

专利号:WO-2022256490-A9
优先权日:2021-06-03
标题:Improved synthesis of phosphoramidates for the treatment of hepatitis b virus
发明人：LOCKWOOD MARK
权利人:ANTIOS THERAPEUTICS INC
摘要:The synthesis of phosphoramidate prodrugs useful in the treatment of viral infections is disclosed. Specifically, an improved synthesis of phosphoramidate nucleotides useful in the treatment of Hepatitis B virus is disclosed.

专利号:US-12054508-B1
优先权日:2019-04-16
标 题 :Compositions and methods for sulfation of carbohydrates and peptides via electron-deficient aryl sulfate diesters
发明人：NIU JIA; LIU CHAO; YANG CANGJIE
权利人:THE TRUSTEES OF BOSTON COLLEGE
摘要:In one aspect, the disclosure relates to a facile strategy to introduce electron-deficient aryl sulfate diesters to silylated hydroxyl groups of carbohydrates and amino acids, among other substrates, wherein selective hydrolysis and the removal of an electron-deficient aromatic group allows for the efficient generation of sulfated carbohydrates, peptides, and other compounds. The incorporation of electron-deficient aryl sulfate diesters in the early stage of the synthesis of glycans, peptides, and the like, disclosed herein avoids time-consuming protecting group manipulations, simplifies the purification of sulfated products, and improves the overall yield and efficiency. This abstract is intended as a scanning tool for purposes of searching in the particular art and is not intended to be limiting of the present disclosure.

专利号:WO-2025132814-A1
优先权日:2023-12-21
标 题:Novel synthesis of methyl-2-fluoroacrylate
发明人：BRUNKE JESSICA; FISCHER MICHAEL; WÖSSNER JAN STEPHAN
权利人:VIFOR INT AG
摘要:The present invention relates to novel synthesis methods of methyl 2-fluoroacrylate (MFA) which is a key precursor for the production of Veltassa® (Patiromer). The methods according to the invention are conducted by reacting an α-substituted β-hydroxy propionic acid derivative (I) via one or more intermediate steps involving one or more α-, β-substituted propionic acid derivatives (II) to obtain MFA (III).

专利号:US-2022081407-A1
优先权日:2020-09-11
标题 :Methods of preparing substituted indanes
发明人：STENGEL PETER J; XU RUI; SPENCER STACEY RENEE
权利人:PELOTON THERAPEUTICS INC
摘要:This application discloses methods for the synthesis of substituted indane analogs that modulate HIF-2α activity, as well as key intermediates produced thereby. The synthesis of 3-(((1S,2S,3R)-2,3-difluoro-1-hydroxy-7-(methylsulfonyl)-2,3-dihydro-1H-inden-4-yl)oxy)-5-fluorobenzonitrile was exemplified.

专利号:WO-2018134343-A1
优先权日:2017-01-19
标题 :Synthesis of phosphoramidates
发明人：WILHELM THORSTEN; SCHÖNE OLGA
权利人:SANDOZ AG
摘要:The present invention is directed to a compound of formula (III), its preparation and to its use for the preparation of a compound of formula (IV). The present invention hence is directed to a process for the preparation of compound of formula (III) and for the preparation of a compound of formula (IV) from a compound of formula (III) via reduction of the compound of formula (III). The present invention is further directed to intermediate compounds for preparing the compound of formula (III) and hence compound of formula (IV).

专利号:US-12077552-B2
优先权日:2021-09-14
标 题:Synthesis of fluoroalkyl tin precursors
发明人：KUIPER DAVID
权利人:ENTEGRIS INC
摘要:The invention provides certain fluorinated alkyl tin compounds which are believed to be useful in the vapor deposition of tin-containing films onto the surface of microelectronic device substrates. Also provided are processes for the preparation of the precursor compounds and processes for the use of such compounds in the deposition of tin-containing films onto microelectronic device substrates.