四氯化锡,Lithium Diisopropyl Amide 以 乙醚,正己烷 用作溶剂,化学反应 8.0H,以70%的收率获得四(二甲氨基)锡 参考文献:Tin Compound,Method Of Synthesizing The Same,Tin Precursor Compound For Atomic Layer Deposition,And Method Of Forming Tin-Containing Material Film 标题:Tin Compound,Method Of Synthesizing The Same,Tin Precursor Compound For Atomic Layer Deposition,And Method Of Forming Tin-Containing Material Film 摘要:一种锡化合物,用于原子层沉积(ald)的锡前体化合物,一种形成含锡材料薄膜的方法,以及一种合成锡化合物的方法,其中锡化合物由化学式(i)表示:其中r1,R2,Q1,Q2,Q3和q4分别独立地是cl至c4的直链或支链烷基基团.
专利信息
专利号:US-7709056-B2 优先权日:2007-05-16 标题 :Synthesis of transparent conducting oxide coatings 发明人:ELAM JEFFREY W; MARTINSON ALEX B F; PELLIN MICHAEL J; HUPP JOSEPH T 权利人:UCHICAGO ARGONNE LLC 摘要:A method and system for preparing a light transmitting and electrically conductive oxide film. The method and system includes providing an atomic layer deposition system, providing a first precursor selected from the group of cyclopentadienyl indium, tetrakis (dimethylamino) tin and mixtures thereof, inputting to the deposition system the first precursor for reaction for a first selected time, providing a purge gas for a selected time, providing a second precursor comprised of an oxidizer, and optionally inputting a second precursor into the deposition system for reaction and alternating for a predetermined number of cycles each of the first precursor, the purge gas and the second precursor to produce the oxide film.
专利号:US-2022411446-A1 优先权日:2021-06-28 标 题:Deuterated organotin compounds, methods of synthesis and radiation patterning 发明人:JILEK ROBERT E; CARDINEAU BRIAN J; HUIHUI-GIST KIERRA; MEYERS STEPHEN T 权利人:INPRIA CORP 摘要:Organotin compounds are presented that are represented by the formula RSnL 3 , wherein R is a deuterated hydrocarbyl group and L is a hydrolysable ligand. Two different synthesis techniques are described for synthesizing these compositions. A first method involves reacting a primary halide hydrocarbyl compound (R—X, where X is a halide atom) with an organometallic composition comprising SnL3 moieties associated with metal cations M, where M is an alkali metal, alkaline earth metal, and/or pseudo-alkaline earth metal (Zn, Cd, or Hg), and L is either an amide ligand resulting in an alkali metal tin triamide compound or an acetylide ligand resulting in an alkali metal tin triacetylide, to form correspondingly a monohydrocarbyl tin triamide (RSn(NR′ 2 ) 3 ) or a monohydrocarbyl tin triacetylide (RSn(C≡CR s ) 3 ). An alternative approach involves reacting a Grignard reagent RMgX with SnL 4 in a solution comprising an organic solvent to form a monoorgano tin tralkylamide, a monoorgano tin trialkoxide, monoorgano tin tri acetylide or monoorgano tin tricarboxylate. The compositions are useful for radiation patterning, especially with EUV radiation.
专利号:US-2008286448-A1 优先权日:2007-05-16 标题:Synthesis of transparent conducting oxide coatings
专利号:US-10954139-B2 优先权日:2015-12-11 标 题:Oleophilic foams for oil spill mitigation 发明人:DARLING SETH B; ELAM JEFFREY W; MANE ANIL U 权利人:UCHICAGO ARGONNE LLC 摘要:A method of fabricating an oleophilic foam includes providing a foam comprising a base material. The base material is coated with an inorganic material using at least one of an atomic layer deposition (ALD), a molecular layer deposition (MLD) or sequential infiltration synthesis (SIS) process. The SIS process includes at least one cycle of exposing the foam to a first metal precursor for a first predetermined time and a first partial pressure. The first metal precursor infiltrates at least a portion of the base material and binds with the base material. The foam is exposed to a second co-reactant precursor for a second predetermined time and a second partial pressure. The second co-reactant precursor reacts with the first metal precursor, thereby forming the inorganic material on the base material. The inorganic material infiltrating at least the portion of the base material. The inorganic material is functionalized with an oleophilic material.
专利号:US-12043893-B2 优先权日:2017-08-24 标题:Manufacturing processes to synthesize, functionalize, surface treat and/or encapsulate powders, and applications thereof 发明人:KING DAVID; DAMERON ARRELAINE; TREVEY JAMES; LICHTY PAUL; ARGO ANDREW; BOURGOIS KYLE; RAGONESI JAMES; INGHAM KYLE; JACKSON DAVID; TRACY RYON; NGUYEN NGHI; LYON ADAM; VILLAGOMEZ JOSE; CURRY GARRETT 权利人:FORGE NANO INC 摘要:A system, apparatus and method are provided for processing articles. The system includes subsystems for synthesizing, pre-treating, conducting a vapor phase coating process and post-treating articles in the form of powders and solid or porous workpieces. The apparatus permits vapor phase synthesis, treatment and deposition processes to be performed with high efficiency and at high overall throughput. The methods include converting solids, liquids or gases into gaseous and solid streams that can be separated or exchanged with or without treatment and/or coating steps, and produce optimized composite articles for specific applications.
专利号:US-11351478-B2 优先权日:2018-09-06 标题 :Oil skimmer with oleophilic coating 发明人:DARLING SETH B; ELAM JEFFREY W 权利人:UCHICAGO ARGONNE LLC 摘要:A method of fabricating an coating includes providing a coating comprising a base material. The base material is coated with an inorganic material using at least one of an atomic layer deposition (ALD), a molecular layer deposition (MLD), or sequential infiltration synthesis (SIS) process. The SIS process includes at least one cycle of exposing the coating to a first metal precursor for a first predetermined time and a first partial pressure. The first metal precursor infiltrates at least a portion of the base material and binds with the base material. The coating is exposed to a second co-reactant precursor for a second predetermined time and a second partial pressure. The second co-reactant precursor reacts with the first metal precursor, thereby forming the inorganic material on the base material. The inorganic material infiltrating at least the portion of the base material. The inorganic material is functionalized with a material.
参考文献:10.1007/978-3-031-23701-0_7 摘要:Ansari MZ, Kim S, Dhara A, Nandi DK. Atomic Layer Deposited Supercapacitor Electrodes. 2023. In: Springer Series in Materials Science. 参考文献:10.1038/s41566-024-01570-4 摘要:Ge Y, Zheng L, Wang H, Gao J, Yao F, Wang C, Li G, Guan H, Wang S, Cui H, Ye F, Shao W, Zheng Z, Yu Z, Wang J, Xu Z, Dai C, Ma Y, Yang Y, Guan Z, Liu Y, Wang J, Lin Q, Li Z, Li X, Ke W, Grätzel M, Fang G. Suppressing wide-angle light loss and non-radiative recombination for efficient perovskite solar cells. Nat. Photon. 2025 Jan 09;19(2):170–7. doi: 10.1038/s41566-024-01570-4. 参考文献:10.1038/s43586-024-00373-9|10.1038/s43586-025-00382-2 摘要:Han J, Park K, Tan S, Vaynzof Y, Xue J, Diau EW, Bawendi MG, Lee J, Jeon I. Perovskite solar cells. Nat Rev Methods Primers. 2025 Jan 16;5(1). doi: 10.1038/s43586-024-00373-9. 参考文献:10.1038/s41566-025-01618-z 摘要:Tian L, Bi E, Yavuz I, Deger C, Tian Y, Zhou J, Zhang S, Liu Q, Shen J, Yao L, Zhao K, Xu J, Chen Z, Xiao L, Yang Z, Shi P, Zhang X, Wang S, Chu S, Haider M, Xue J, Wang R. Divalent cation replacement strategy stabilizes wide-bandgap perovskite for Cu(In,Ga)Se2 tandem solar cells. Nat. Photon. 2025 Feb 03;19(5):479–85. doi: 10.1038/s41566-025-01618-z. 参考文献:10.1007/s40042-025-01397-4 摘要:Bae J, Jeon H. Effects of deposition and annealing temperature on atomic layer-deposited tin dioxide thin films. J. Korean Phys. Soc. 2025 May 21;87(2):186–93. doi: 10.1007/s40042-025-01397-4.