CAS: 1719-53-5; Dichlorodiethylsilane

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CAS号75-00-3 氯乙烷 | CAS号358-53-2 2-chloroethyl-d... | CAS号925-90-6 乙基溴化镁 | CAS号115-21-9 乙基三氯硅烷 | CAS号78-10-4 正硅酸乙酯 | CAS号78-07-9 三乙氧基乙基硅烷 | CAS号54509-73-8 ethene | CAS号1789-58-8 乙基二氯硅烷 | CAS号5021-93-2 二乙基二乙氧基硅烷 | CAS号542-91-6 二乙基硅烷 | CAS号1609-19-4 chloro(diethyl)... | CAS号994-30-9 三乙基氯硅烷 | CAS号14760-10-2 2,2-diethyl-4,4... | CAS号507-20-0 氯代叔丁烷 | CAS号2031-65-4 diethyldihydrox... | CAS号5021-93-2 二乙基二乙氧基硅烷 | CAS号597-67-1 乙氧基三乙基硅烷 | CAS号18173-55-2 dimethylethylet... | CAS号1745-72-8 二乙烯基二氯硅烷

氯乙烷置于铜,硅烷体系中,化学反应生成二氯二乙基硅烷
参考文献:Preparation Of Organosilicon Halides
标题:Preparation Of Organosilicon Halides
摘要:有机硅卤化物是通过将烷基或芳基卤化物与由硅和铜组成的固体多孔接触物质一起加热制备的,该接触物质是通过规范575,669的过程制备的. 反应最好在常压下进行,温度在200摄氏度至500摄氏度之间,特别是在250摄氏度至400摄氏度之间. 在示例1-7中,氯化甲基通过管道在铜硅合金上经过略微变化的流量,温度和催化剂形式条件下. 示例8使用氯乙烷,示例9使用溴化甲基,示例10使用溴化乙基,示例11使用碘化甲基,示例12使用氟化甲基,示例13使用溴苯. 还参考了规范542,655,572,740,575,667.

专利信息

专利号:US-4190579-A
优先权日:1977-12-29
标题:Synthesis of beta-lactams from azetidine carboxylic acid esters
发明人：LIPSHUTZ BRUCE H; WASSERMAN HARRY H; WU JAMES S
权利人:RESEARCH CORP
摘要:Azetidine carboxylic acid esters are converted into enol silyl ethers which, as enamino ketene acetals, undergo ready oxidative cleavage of the ethylenically unsaturated double bond, e.g. by dye-sensitized photo-oxygenation, to form beta-lactams. The beta-lactams and substitution products thereof are useful intermediates in the synthesis of biologically active lactams.

专利号:US-2023192731-A1
优先权日:2020-05-29
标 题 :Process for the stepwise synthesis of silahydrocarbons
发明人：AUNER NORBERT; STURM ALEXANDER G; SANTOWSKI TOBIAS; FELDER THORSTEN
权利人:MOMENTIVE PERFORMANCE MAT INC
摘要:The invention relates to a process for the stepwise synthesis of silahydrocarbons bearing up to four different organyl substituents at the silicon atom, wherein the process includes at least one step a) of producing a bifunctional hydridochlorosilane by a redistribution reaction, selective chlorination of hydridosilanes with an ether/HCl reagent, or by selective chlorination of hydridosilanes with SiCl 4 , at least one step b) of submitting a bifunctional hydridochloromonosilane to a hydrosilylation reaction, at least one step c) of hydrogenation of a chloromonosilane, and a step d) in which a silahydrocarbon compound is obtained in a hydrosilylation reaction.

专利号:US-6242614-B1
优先权日:1999-05-28
标 题:Semi-synthesis of paclitaxel using dialkyldichlorosilanes
发明人：VEMISHETTI PURUSHOTHAM; GIBSON FRANCIS S; DILLON JOHN L
权利人:BRISTOL MYERS SQUIBB CO
摘要:A process for the synthesis of paclitaxel from 10-deacetylbaccatin-III which is protected at the 7-position with a dialkylalkoxysilyl protecting group having the formula —Si(R) 2 (OR′).

专利号:US-7098354-B2
优先权日:2002-10-25
标 题:Racemoselective synthesis of rac-diorganosilylbis(2-methylbenzo[e]indeyl)zirconium compounds
发明人：DAMRAU HANS-ROBERT; MUELLER PATRIK; GARCIA VALERIE; SIDOT CHRISTIAN; TELLIER CHRISTIAN; LELONG JEAN-FRANCOIS
权利人:BASELL POLYOLEFINE GMBH
摘要:The present invention relates to a specific process for the diastereoselective synthesis of rac-diorganosilylbis(2-methylbenzo[e]indenyl)zirconium compounds of the formula I, n nby reacting the silyl-bridged bisindenyl ligand with a dihalozirconium bis(3,5-di-tert-butylphenoxide)-base adduct to form the diorganosilylbis(2-methylbenzo[e]indenyl)zirconium bis(3,5-di-tert-butylphenoxide) and subsequently replacing the phenoxide groups by X using suitable replacement reagents to give the compound of the formula I; where the substituents X can be identical or different and are each F, Cl, Br, I or linear, cyclic or branched C 1-10 -alkyl; and the substituents R can be identical or different and are each linear, cyclic or branched C 1-10 -alkyl or C 6-10 -aryl; and also to the use of these compounds as catalysts.

专利号:US-10669160-B2
优先权日:2018-04-30
标题:Heterogeneous wet synthesis process for preparation of high purity tungsten pentahalide
发明人：LIU YUMIN; LI FENG; WAN ZHIWEN; FAFARD CLAUDIA; WIESE STEFAN; HUSSON GUILLAUME; NIKIFOROV GRIGORY; SUI BIN; GIRARD JEAN-MARC
权利人:AIR LIQUIDE; AIR LIQUIDE AMERICAN
摘要:Synthesis of tungsten pentahalide compositions having low impurity profiles are disclosed. The specific impurity profile permits deposition of high purity tungsten-containing films using vapor deposition processes or other semiconductor manufacturing processes without introduction of performance-impacting contaminants.

专利号:US-6843978-B2
优先权日:1999-11-24
标题:Microporous materials (TIQ-6 and METIQ-6) of high surface area active in oxidation reactions
发明人：CORMA CANOS AVELINO; FORNES SEGUI VICENTE; DIAZ MORALES URBANO; DOMINE MARCELO EDUARDO
权利人:CONSEJO SUPERIOR INVESTIGACION; UNIV VALENCIA POLITECNICA
摘要:The present invention refers to a microporous material formed by oxygen, silicon, germanium, aluminum, boron, gallium, zirconium and/or titanium in its composition, called TIQ-6, to its catalytic applications in oxidation reactions, and to a method of the TIQ-6 material's preparation based on the synthesis of a gel with a titanium and/or zirconium content, its hydrothermal treatment under controlled conditions, and the treatment of the resulting laminar material with a solution of an organic compound containing a proton accepting group. This swollen material is subjected to a specific treatment to obtain a high external area delaminated solid. A material, METIQ-6, similar to the TIQ-6 material, but also having organic groups anchored on its surface incorporated by a post-synthesis process onto the TIQ-6 material is also claimed.