专利号:WO-2021108999-A1 优先权日:2019-12-03 标 题 :Method for continuous synthesis of 4-ethoxy-1,1,1-trifluoro-3-buten-2-one 发明人:HONG HAO; ZHANG ENXUAN; LU JIANGPING; SHEN WEI; YAN HONGLEI; LIU YUNPENG 权利人:LIAONING ASYMCHEM LABORATORIES CO LTD 摘要:Disclosed is a method for the continuous synthesis of 4-ethoxy-1,1,1-trifluoro-3-buten-2-one. The continuous synthesis method comprises: continuously introducing a raw material comprising vinyl ethyl ether, triethylamine and trifluoroacetic anhydride into a continuous reactor for a reaction to obtain a product system containing 4-ethoxy-1,1,1-trifluoro-3-buten-2-one, and continuously extracting the product system to obtain 4-ethoxy-1,1,1-trifluoro-3-buten-2-one. By using the continuous process, the above-mentioned raw materials can all be conveniently and accurately introduced into the continuous reactor, and after the reaction is completed, continuous extraction is also used for a post-treatment. The whole process is rapid, simple and efficient, the efficiency of the whole synthesis process is greatly increased, product destruction loss is reduced, and hidden safety hazards during batch production are avoided. After scaling up, there is no amplification effect, and safety and a relatively high synthesis efficiency can still be maintained.
专利号:US-5028724-A 优先权日:1990-03-30 标题:Synthesis of volatile fluorinated and non-fluorinated metal-beta-ketonate and metal-beta-ketoiminato complexes 发明人:IVANKOVITS JOHN C; BOHLING DAVID A; NORMAN JOHN A T; ROBERTS DAVID A 权利人:AIR PROD & CHEM 摘要:A process for the vapor-phase synthesis of non-adduct volatile fluorinated and non-fluorinated metal-ligand complexes comprising contacting a β-diketone or β-ketoimine ligand with an inert carrier gas to vaporize the ligand, reacting the vaporized ligand with a metal species at a temperature sufficient to form the metal-ligand complex and recovering the metal-ligand complex by sublimation. The process is conducted in the absence of solvent thereby providing pure non-adduct metal-ligand complexes. Such complexes are particularly suited for specialty applications requiring use of high purity compounds.
专利号:US-6096913-A 优先权日:1999-06-10 标 题:Production of metal-ligand complexes 发明人:NORMAN JOHN ANTHONY THOMAS; SENZAKI YOSHIHIDE; ROBERTS DAVID ALLEN 权利人:AIR PROD & CHEM 摘要:In a process for the synthesis of a first metal-ligand complex, M +n (L - ) n , where n≧1, from a metal compound precursor and a ligand precursor, where the metal of the metal compound precursor may during the synthesis change to a valence in excess of n; the improvement, to suppress formation of a second metal-ligand complex of the metal with a valence in excess of n, of adding the elemental form of the metal to the synthesis of the first metal-ligand complex.
专利号:US-6015918-A 优先权日:1998-11-10 标 题 :Allyl-derived precursor and synthesis method 发明人:ZHUANG WEI-WEI; NGUYEN TUE; STECKER GREG MICHAEL; EVANS DAVID RUSSELL; HSU SHENG TENG 权利人:SHARP LAB OF AMERICA INC 摘要:A Cu(hfac) allyl-derived ligand precursor has been provided. The ligand includes group consisting of alkyl, phenyl, trialkylsilane, trialkoxylsilane, halodialkylsilane, dihaloalkylsilane, trihalosilane, triphenylsilane, alkoxyl, halogen, chloroformate, cynanide, cycloalkyl, cycloalkylamine, alkyl ether, isocyanate, and pentafluorobenzene. Examples of the allyl-derived ligand precursors have proved to be stable at room temperatures, and sufficiently volatile at higher temperatures. Copper deposited with this precursor has low resistivity and high adhesive characteristics. A synthesis method has been provided which produces a high yield of the above-described precursors, including a Cu(hfac)(allyltrimethylsilane) precursor.
专利号:US-6440494-B1 优先权日:2000-04-05 标 题 :In-situ source synthesis for metal CVD 发明人:ARENA-FOSTER CHANTAL 权利人:TOKYO ELECTRON LTD 摘要:An in-situ method for synthesis of a vapor type of copper or other metal precursor from a solid source of metal in an oxidation state of 1 or greater The solid source is localized above the wafer and its temperature is controlled independently from the wafer temperature. The solid source may be located, for example, in a showerhead. A metal precursor vapor is produced, and this vapor is drawn onto the wafer, allowing deposition to occur on the wafer and a solid thin metal film to form on the wafer. The invention overcomes the problem of low partial pressure of copper precursors in copper CVD.
专利号:US-6090963-A 优先权日:1998-11-10 标题 :Alkene ligand precursor and synthesis method 发明人:ZHUANG WEI-WEI; NGUYEN TUE; BARROWCLIFF ROBERT; EVANS DAVID RUSSELL; HSU SHENG TENG 权利人:SHARP LAB OF AMERICA INC 摘要:A metal(hfac), alkene ligand precursor has been provided. The alkene ligand includes double bonded carbon atoms, with first and second bonds to the first carbon atom, and third and fourth bonds to the second carbon atom. The first, second, third, and fourth bonds are selected from a the group consisting of H, C 1 to C 8 alkyl, C 1 to C 8 haloalkyl, and C 1 to C 8 alkoxyl. As a general class, these precursors are capable of high metal deposition rates and high volatility, despite being stable in the liquid phase at low temperatures. Copper deposited with this precursor has low resistivity and high adhesive characteristics. A synthesis method has been provided which produces a high yield of the above-described alkene ligand class of metal precursors.