专利号:US-2023312617-A1 优先权日:2020-07-25 标题 :Process for synthesis of organosilicon compounds from halosilanes 发明人:DOLAI SUKANTA; BHAT SHREEDHAR; TARAFDAR GOURAV 权利人:MOMENTIVE PERFORMANCE MAT INC 摘要:A process for synthesis of an organosilicon compound is provided herein. Also, novel organosilicon compounds prepared by the present process is provided herein. The process comprises the reaction of a halosilane with an organofunctional alkyl halide in the presence of a metal catalyst, a promoter, and an optional co-catalyst. The process provides an efficient synthetic route to produce organosilicon compounds. The process also allows synthesis of organosilicon compounds with a plurality of different functional groups.
专利号:US-4919804-A 优先权日:1988-03-01 标 题:Ultrasound driven synthesis of reversed and normal phase stationary phases for liquid chromatography 发明人:DORSEY JOHN G; SENTELL KAREN B; BARNES KAREN W 权利人:UNIV FLORIDA 摘要:In a method for producing a reversed phase bonded metal oxide by reacting the metal oxide with a reactive silane, the improvement comprising conducting the reaction in the presence of ultrasonic waves.
参考标题:Molecular Spoked Wheels: Synthesis And Self-Assembly Studies On Rigid Nanoscale 2D Objects 作者:A. Vikas Aggarwal,Stefan-S. Jester,Sara Mehdizadeh Taheri,Stephan Förster,Sigurd Höger |发布日期:2013.4.2 摘要:We Present The Efficient Synthesis Of A New Molecular Spoked‐wheel Structure (Msw‐3). Two Derivatives With Diameters Of Approximately 4 Nm Have Been Prepared. By Highlighting The Importance Of Pseudo‐high‐dilution Conditions During Cyclization, We Were Able To Access The Compounds On A Several Hundred Milligram Scale. In Addition To The Standard Characterization (Nmr Spectroscopy, Ms), We Describe
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参考文献:10.1055/s-0036-1591979 摘要:Larson G. Some Aspects of the Chemistry of Alkynylsilanes. Synthesis. 2018 May 18;50(13):2433–62. doi: 10.1055/s-0036-1591979. 参考文献:10.1557/s43578-023-01015-8 摘要:Takane H, Izumi H, Hojo H, Wakamatsu T, Tanaka K, Kaneko K. Effect of dislocations and impurities on carrier transport in α-Ga2O3 on m-plane sapphire substrate. Journal of Materials Research. 2023 May 12;38(10):2645–54. doi: 10.1557/s43578-023-01015-8.