CAS: 10035-06-0; Bismuth Nitrate Pentahydrate

专利信息

专利号:US-9518219-B2
优先权日:2014-01-30
标题 :Hydrothermal synthesis of bismuth germanium oxide
发明人：BOYLE TIMOTHY J
权利人:SANDIA CORP
摘要:A method for the hydrothermal synthesis of bismuth germanium oxide comprises dissolving a bismuth precursor (e.g., bismuth nitrate pentahydrate) and a germanium precursor (e.g., germanium dioxide) in water and heating the aqueous solution to an elevated reaction temperature for a length of time sufficient to produce the eulytite phase of bismuth germanium oxide (E-BGO) with high yield. The E-BGO produced can be used as a scintillator material. For example, the air stability and radioluminescence response suggest that the E-BGO can be employed for medical applications.

专利号:US-9881707-B2
优先权日:2012-12-18
标 题 :X-ray shielding material and method of preparation thereof
发明人：KALE BHARAT B; KULKARNI MILIND V; PANMAND RAJENDRA P; KAWADE UJJWALA V; APTE SANJAY K; NAIK SONALI D; AMBEKAR JALINDAR D; SONAWANE RAVINDRA S; AMLANERKAR DINESH P; SHROFF NILOFER; CHATTERJEE SANDIP
权利人:CENTRE FOR MATERIALS FOR ELECTRONICS TECH (C-MET); SECRETARY DEPARTMENT OF ELECTRONICS AND INFORMATION TECH (DEITY)
摘要:The present disclosure relates to a process for synthesis of barium bismuth sulfide nanofibers, having equivalent shielding capacity as lead. The present disclosure also relates to a radiation shielding articles and cosmeceuticals.

专利号:WO-2024123268-A1
优先权日:2022-12-09
标 题 :Production of silver nanoparticles by green synthesis using hazelnut husk extract
发明人：AKDOGAN OZAN; GUNDUZ AKDOGAN NILAY; SIVRI DAMLA; KUREL ALI
权利人:BAHCESEHIR UNIV; PIRI REIS UNIV
摘要:The invention relates to synthesis of nanoparticles from hazelnut husk extract by green synthesis with high efficiency. Use of chemical is limited in the present invention and therefore the synthesis of nanoparticles is provided by green chemistry in the present invention. Said hazelnut may be Corylus and said hazelnut husk may be cob or shell of the hazelnut. In an embodiment of the invention said Corylus may be Colyrus colurna, Corylus americana Corylus avellana, Corylus avellana var. Avellana, Corylus avellana var. Pontica, Corylus chinensis, Corylus colchica, Corylus × colurnoides, Corylus cornuta, Corylus cornuta ssp. californica, Corylus cornuta ssp. cornuta, Corylus fargesii, Corylus ferox, Corylus ferox var. ferox, Corylus ferox var. thibetica, Corylus heterophylla, Corylus heterophylla var. heterophylla, Corylus heterophylla var. sutchuensis, Corylus jacquemontii, Corylus maxima, Corylus potaninii, Corylus sieboldiana, Corylus sieboldiana var. mandshurica, Corylus sieboldiana var. sieboldiana, Corylus wangii, Corylus wulingensis or Corylus yunnanensis.

专利号:US-8957260-B2
优先权日:2011-02-07
标题 :Process for the oxidation of mesitol
发明人：WEYRAUCH JAN PHILIPP; WEIS MARTINE; TELES JOAQUIM HENRIQUE; EBEL KLAUS; DEGLMANN PETER
权利人:WEIS MARTINE; TELES JOAQUIM HENRIQUE; EBEL KLAUS; DEGLMANN PETER; WEYRAUCH VIVIEN ELLINOR; WEYRAUCH GUNHILD; BASF SE
摘要:The invention relates to a process for the oxidation of mesitol with singlet oxygen, which is released from hydrogen peroxide, this release taking place in the presence of a bismuth compound as catalyst. In the process, 2,4,6-trimethylquinol is formed in high yield and selectivity as product, which can be used in further reactions for the synthesis of vitamins and in particular of vitamin A and vitamin E.

专利号:US-12227856-B2
优先权日:2023-02-24
标题 :Protocol for the synthesis of bismuth vanadate double-layer homojunction without heteroatoms as photoelectrode
发明人：ZHANG RUIQIN; WANG HAIPENG
权利人:UNIV CITY HONG KONG
摘要:A photoelectrode includes a double-layer homojunction of metal oxide semiconductor films without heteroatoms incorporated. The metal oxide semiconductor films are uniform in large size with rich oxygen vacancies. For BiVO4 films, Bi precursor can be electrodeposited on a substrate under atmospheric pressure and air atmosphere. The electrolytes for electrodeposition are acidic or alkaline with controllable pHs. The electrodeposited substrate is transferred to the muffle furnace for thermal evaporation with V precursor. Film thickness and size can be controlled by electrodeposition parameters. The BiVO4 double-layer homojunction is a safer and cheaper material in photo-driven devices, hydrogen producers, and solar cells, and is an economical replacement of costly III-V compounds, polymers, and valuable fossil. The BiVO4 double-layer homojunction can also be employed as photoelectrodes for H2 production via photoelectrochemical (PEC) water splitting under solar light, which can provide pivotal reactor materials for hydrogen producers and solar cells.

专利号:US-2024295037-A1
优先权日:2023-02-24
标 题 :Protocol for the synthesis of bismuth vanadate double-layer homojunction without heteroatoms as photoelectrode