CAS: 12033-89-5; Silicon Nitride

专利信息

专利号:US-4522886-A
优先权日:1984-10-09
标 题 :Method of ion beam synthesis of thin silicon nitride films and resulting articles
发明人：CHIN ROLAND L; FERGUSON SUSAN A
权利人:ALLIED CORP
摘要:A method is disclosed for the synthesis of ultra-thin silicon nitride (Si x N y ) films by the direct interaction of a low energy noble ion beam (e.g. Ar + or He + ), with NH 3 physically absorbed on a silicon surface. The method is directed toward applications which require the use of ultra-thin insulating layers, such as in MIS technology. n The disclosed method provides for the synthesis of ultra-thin films of silicon nitride via the interaction of NH 3 absorbed on a silicon substrate and a low energy nobel ion beam. Preferential absorption of NH 3 is effected by cooling of the substrate below the boiling point of NH 3 . The ion beam is used to generate reactive N and Si species which combine to form compounds of silicon nitride. The physical appearance of the films formed by this method is comparable to those produced by low pressure chemical vapor deposition.

专利号:US-2025197431-A1
优先权日:2023-12-15
标 题:Methods and systems for forming a layer comprising silicon and composition and synthesis of silicon precursor
发明人：ROMERO PATRICIO EDUARDO; VERVUURT RENÉ HENRICUS JOZEF; DEZELAH CHARLES; PORE VILJAMI J
权利人:ASM IP HOLDING BV
摘要:Disclosed are methods and systems for forming a silicon-containing layer on a substrate. Further disclosed are composition and synthesis of silicon-containing precursor. The methods for forming a silicon-containing layer comprise executing a plurality of deposition cycles. A deposition cycle comprises a first precursor pulse that comprises exposing the substrate to a first precursor. The first precursor comprises a molecule comprising a P—Si bond. A deposition cycle further comprises a plasma pulse that comprises exposing the substrate to a plasma treatment. The plasma treatment comprises generating a plasma.

专利号:US-10636654-B2
优先权日:2017-04-06
标题:Wafer-scale synthesis of large-area black phosphorus material heterostructures
发明人：XIA FENGNIAN
权利人:UNIV YALE
摘要:A scalable approach for the synthesis of black phosphorus (BP) material thin films over large areas is described. A red phosphorus (RP) material thin film may be deposited on a substrate followed by conversion to a BP material thin film using high-pressure alone or high pressure and high temperature. A thin-film of dielectric material such as hexagonal boron nitride (hBN) can be formed on a RP material film before the conversion is performed to improve the crystalline quality and stability of the converted BP material. Surprisingly, an atomically sharp and defect-free interface can be formed between the converted BP material and hBN. The BP material has high crystalline uniformity and can be used to fabricate thin-film transistors and optoelectronic devices such as infrared photodetectors.

专利号:US-8404313-B1
优先权日:2006-03-22
标 题 :Synthesis of nanocrystalline diamond fibers
发明人：KUMAR ASHOK; SINGH MANOJ KUMAR
权利人:KUMAR ASHOK; SINGH MANOJ KUMAR; UNIV SOUTH FLORIDA
摘要:Provided herein is a method for the synthesis of nanocrystalline diamond (NCD) wires by depositing nanocrystalline diamond on Si nanowires using chemical vapor deposition methods. Seeding the nanowires in solutions containing nanodiamond powers, NCD wires are fabricated in typical CVD growth conditions within a very short time. NCD wires were 0.5-5 μm in diameter, depending on the growth time, with lengths in the range of 20-100 μm. The average elastic modulus determined by nanoindentation is 474.16±13.48 GPa. The unique mechanical properties of the NCD wire make it a potential material for active components of both electronic and electromechanical devices.

专利号:US-2004092003-A1
优先权日:1997-03-19
标题:Multifunctional ceramic particles as solid supports for solid phase and combinatorial solid phase synthesis
发明人：BOSCHETTI EGISTO; KOCIS PETR
权利人:INVITROGEN CORP
摘要:Inert, thermally and mechanically stable porous ceramic solid phase supports for use in solid phase synthesis of molecules wherein the porous ceramic solid supports can be used under a wide variety of reaction conditions and in synthesis methods, including but not limited to organic, regular, multiple parallel, or combinatorial organic synthesis on a solid phase. Methods of using the porous ceramic solid supports for solid phase synthesis of molecules, for solid phase synthesis of polypeptides or peptidomimetics, for generating combinatorial libraries of linkers, and for combinatorial synthesis of compounds, including small molecules and aromatic and heteroaromatic compounds.

专利号:WO-2012048494-A1
优先权日:2010-10-13
标 题:Hydrogen chloride gas ejecting component used in trichlorosilane synthesis tower and method using the same
发明人：WU WEIXING; PU QUANFU; LI HAIJUN; ZHANG CHUNLIN; XU LIJUN; LIU JUN; CHEN YANMEI; CHEN GUOQI; PAN LUNTAO
权利人:NINGXIA SUNSHINE SILICONE IND CO LTD; WU WEIXING; PU QUANFU; LI HAIJUN; ZHANG CHUNLIN; XU LIJUN; LIU JUN; CHEN YANMEI; CHEN GUOQI; PAN LUNTAO
摘要:A hydrogen chloride gas ejecting component (50) used in a trichlorosilane synthesis tower includes a shaft portion (51) with a screw thread, a head portion (52) connecting with the shaft portion (51) and having a same axial line as that of the shaft portion (51), and an end cap portion (53) connecting with the head portion (52), in which the head portion (52) has an external diameter larger than that of the shaft portion (51), and the end cap portion (53) has an external diameter larger than the maximum external diameter of the head portion (52); the center of the shaft portion (51) is provided with an axial gas supply hole (54) extending to the inside of the head portion (52), and on the head portion (52) are provided multiple horizontal gas ejecting holes (55) and inclined-up gas ejecting holes (56) which are cross communicated with the gas supply hole (54) and opened at the outer surface of the head portion (52), the gas ejecting holes are each at an angle of 90 to 40 degrees with the upward axial line. A method for synthesis of trichlorosilane by using the hydrogen chloride gas ejecting component (50) is also provided. The hydrogen chloride gas ejecting component (50) has a good ejecting effect, no clogging, and a long service life, and the production of trichlorosilane by the method has a high yield and a high efficiency.