CAS: 1825-59-8; Ethoxy(Methyl)Diphenylsilane

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CAS号64-17-5 乙醇 | CAS号776-76-1 甲基二苯基硅烷 | CAS号2553-19-7 二乙氧基二苯基硅烷 | CAS号75-16-1 甲基溴化镁 | CAS号2031-67-6 三乙氧基甲基硅烷 | CAS号591-51-5 苯基锂 | CAS号144-79-6 二苯基甲基氯硅烷 | CAS号13950-57-7 Acetic acid,2-(... | CAS号14920-93-5 dimethyl-[methy... | CAS号778-25-6 羟基甲基二苯基硅烷 | CAS号144-79-6 二苯基甲基氯硅烷 | CAS号17739-53-6 二苯基甲基硅烷氟 | CAS号807-28-3 1,3-二甲基-1,1,3,3...

1,1-Dichloro-1,2-Dimethyl-2,2-Diphenyldisilane置于三乙胺体系中,用 甲苯 用作溶剂,化学反应 15.5H,反应生成甲基二苯基乙氧基硅烷
参考文献:Remarkably Facile Thermal Generation Of Silylene From A Pentacoordinate Alkoxydisilane And Its Trapping As A Pentacoordinate 1,2-Disilacyclobut-3-Ene
标题:Remarkably Facile Thermal Generation Of Silylene From A Pentacoordinate Alkoxydisilane And Its Trapping As A Pentacoordinate 1,2-Disilacyclobut-3-Ene
摘要:
Doi:10.1021/ja00151A030

专利信息

专利号:US-8889334-B2
优先权日:2001-11-15
标题:Spin-on anti-reflective coatings for photolithography
发明人：KENNEDY JOSEPH T; BALDWIN-HENDRICKS TERESA
权利人:HONEYWELL INT INC
摘要:Anti-reflective coating materials for ultraviolet photolithography include at least one absorbing compounds and at least one pH tuning agent that are incorporated into spin-on materials. Suitable absorbing compounds are those that absorb around wavelengths such as 365 nm, 248 nm, 193 nm and 157 nm that may be used in photolithography. Suitable pH tuning agents not only adjust the pH of the final spin-on composition, but also influence the chemical performance and characteristics, mechanical performance and structural makeup of the final spin-on composition that is part of the layered material, electronic component or semiconductor component, such that the final spin-on composition is more compatible with the resist material that is coupled to it. A method of making absorbing and pH tuned spin-on materials includes combining at least one organic absorbing compound and at least one pH tuning agent with at least one silane reactant during synthesis of the spin-on materials and compositions.

专利号:US-7678462-B2
优先权日:1999-06-10
标 题:Spin-on-glass anti-reflective coatings for photolithography
发明人：KENNEDY JOSEPH; BALDWIN TERESA; HACKER NIGEL P; SPEAR RICHARD
权利人:HONEYWELL INT INC
摘要:Anti-reflective coating materials for deep ultraviolet photolithography include one or more organic light-absorbing compounds incorporated into spin-on-glass materials. Suitable absorbing compounds are strongly absorbing over wavelength ranges around wavelengths such as 365 nm, 248 nm, and 193 nm that may be used in photolithography. A method of making absorbing spin-on-glass materials includes combining one or more organic absorbing compounds with alkoxysilane or halosilane reactants during synthesis of the spin-on-glass materials.

专利号:CN-103113400-B
优先权日:2013-03-12
标题 :The method of synthesis of phenyl methyl dioxane TMOS

专利号:CN-103113400-A
优先权日:2013-03-12
标题:The method for highly selective synthesis of phenylmethyldialkoxysilane

专利号:CN-109438633-A
优先权日:2018-09-11
标题:A kind of organosilicon toughening agent with anti-drip effect and synthesis method thereof

专利号:CN-105085923-B
优先权日:2015-09-06
标 题:A kind of Vinylphenyl silicon resin and preparation method thereof of solventless method synthesis